Name: Patent 3356858: Low stand-by power complementary field effect circuitry
Author: Frank Wanlass

Quotes from Patent 3356858: Low stand-by power complementary field effect circuitry (Frank Wanlass)

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ When an electric field is applied to the surface of an insulated field-effect semiconductor device, the mobile charge carriers within the semiconductor device are attracted to or repelled from the surface. In the event the field so applied is of adequate magnitude and of proper polarity, the resulting accumulation of carriers near the surface can result in the formation of an inversion layer or channel in which the majority carrier near the surface is of opposite type from that in the remainder of the semiconductor body. ”

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Source: Wikisource

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ When the potential applied to a gate is less than the critical value, the impedance between the source and the drain is very high and corresponding to a reverse biased planar silicon diode.
The voltage applied to the drain of the field-effect semiconductor devices is of a polarity to reverse bias the diffused junction at the drain contact. ”

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Source: Wikisource

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ From the foregoing, it is to be observed that the usual requirement of more stand-by power for rapid switching is avoided, since stand-by power is not dissipated in any passive load resistor or component. ”

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Source: Wikisource

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ The above-described circuits of the present invention are relatively unaffected in performance by ambient temperatures up to approximately 150 degrees centigrade, since they employ only majority carrier devices which are relatively temperature-independent. ”

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Source: Wikisource

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ The N-type diffused regions 91 and 92 are formed in a conventional manner by diffusing antimony, arsenic or phosphorous into the P-type region 90. An insulated layer 95 preferably of silicon dioxide is thermally grown on the surface 86 of the silicon body 83 and is located in part between associated drain and source contacts. The drain contacts 87 and 93, as well as the source contacts 88 and 94, are metallized with a suitable metallic substance, such as aluminum. Source contact 93 also serves as the metal interconnection between P-type region 90 and N-type region 92. ”

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Source: Wikisource

Frank Wanlass, Patent 3356858: Low stand-by power complementary field effect circuitry (1967)

“ Accordingly, the circuit 50 produces a switching or inverting action without employing any passive load component, such as a load resistor. Further, it is to be observed from the inverter circuit 50 that only one of the semiconductor devices 10 and 30 will conduct if the input voltage Vi is above a predetermined positive value or below a predetermined negative value. ”

Frank Wanlass

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Quotes from Patent 3356858: Low stand-by power complementary field effect circuitry (Frank Wanlass)

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Frank Wanlass

Summary

Quotes from Patent 3356858: Low stand-by power complementary field effect circuitry (Frank Wanlass)

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